Rapid and Uniform SiO 2 Film...

Japanese Journal of Applied Physics 2005 / 1 Vol. 44; Iss. 1A

Rapid and Uniform SiO 2 Film Growth on 4 inch Si Wafer Using 100%-O 3 Gas

Nishiguchi, Tetsuya, Sato, Yosuke, Nonaka, Hidehiko, Ichimura, Shingo, Noyori, Takeshi, Morikawa, Yoshiki, Kekura, Mitsuru, Nihei, Yoshimasa
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.118
Date:
January, 2005
File:
PDF, 104 KB
english, 2005
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