Suppression of Boron Penetration from...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2157
Date:
April, 2005
File:
PDF, 121 KB
english, 2005
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