Topography Simulation for Nanometer Semiconductor Process

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Topography Simulation for Nanometer Semiconductor Process

Lee, Jun-Gu, Yoon, Sukin, Won, Taeyoung
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3017
Date:
April, 2006
File:
PDF, 383 KB
english, 2006
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