Atmospheric In situ...

Japanese Journal of Applied Physics 2007 / 4 Vol. 46; Iss. 4B

Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor

Ikuta, Tetsuya, Miyanami, Yuki, Fujita, Shigeru, Iwamoto, Hayato, Kadomura, Shingo, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.1916
Date:
April, 2007
File:
PDF, 411 KB
english, 2007
Conversion to is in progress
Conversion to is failed