Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN...

Japanese Journal of Applied Physics 2007 / 8 Vol. 46; Iss. 8A

Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide

Yang, Gow-Huei, Hwang, Jun-Dar, Lan, Chih-Hsueh, Chan, Chien-Mao, Chen, Hone-Zem, Chang, Shoou-Jinn
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Volume:
46
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.5119
Date:
August, 2007
File:
PDF, 776 KB
2007
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