Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si 1- x Ge x with Whole Ge Fraction on Insulator
Sadoh, Taizoh, Toko, Kaoru, Kanno, Hiroshi, Masumori, Shunji, Itakura, Masaru, Kuwano, Noriyuki, Miyao, MasanobuVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.1876
Date:
March, 2008
File:
PDF, 233 KB
english, 2008