Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process
Tamura, Koji, Yoshioka, Tasuku, Ohmori, Kiyoshige, Yamauchi, Hiroshi, Sato, Masayuki, Kawamura, AkioVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.08HC02
Date:
August, 2009
File:
PDF, 276 KB
english, 2009