Metal Schottky Source/Drain Technology for Ultrathin...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DC06
Date:
April, 2011
File:
PDF, 343 KB
english, 2011
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