The Effect of Carrier Injection Stress on Boron-Doped...

Japanese Journal of Applied Physics 2011 / 9 Vol. 50; Iss. 9

The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy

Lee, Sunhwa, Park, Seungman, Park, Jinjoo, Kim, Youngkuk, Yoon, Kichan, Shin, Chonghoon, Baek, Seungsin, Kim, Joondong, Lee, Youn-Jung, Yi, Junsin
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.095801
Date:
September, 2011
File:
PDF, 532 KB
english, 2011
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