Submicron-Length Tungsten-Gate Self-Aligned GaAs FET

Japanese Journal of Applied Physics 1982 / 7 Vol. 21; Iss. Part 2, No

Submicron-Length Tungsten-Gate Self-Aligned GaAs FET

Matsumoto, Kazuhiko, Hashizume, Nobuo, Atoda, Nobuhumi, Nishimura, Kazuhiro, Tomizawa, Kazutaka, Kurosu, Tateki, Iida, Masamori
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Volume:
21
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.21.L445
Date:
July, 1982
File:
PDF, 805 KB
1982
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