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LPE Growth of Lattice-Matched InGaAsP on GaAs...

LPE Growth of Lattice-Matched InGaAsP on GaAs 0.69 P 0.31 Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers

Fujimoto, Akira, Watanabe, Hideaki, Takeuchi, Masashi, Shimura, Mikihiko
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Volume:
24
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L653
Date:
August, 1985
File:
PDF, 4.51 MB
english, 1985
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