Characterization of Oxygen Precipitates in CZ-Silicon...

Japanese Journal of Applied Physics 1990 / 2 Vol. 29; Iss. Part 2, No

Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography

Katayama, Ken-ichi
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L198
Date:
February, 1990
File:
PDF, 602 KB
english, 1990
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