Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiO x N y H z Films
Castán, Helena, Dueñas, Salvador, Barbolla, Juan, del Prado, 'Alvaro, Mártil, Ignacio, González-Díaz, GermánVolume:
42
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.4978
Date:
August, 2003
File:
PDF, 601 KB
2003