Defect Distribution in N-Doped and Semi-Insulating 6H-SiC...

Japanese Journal of Applied Physics 2008 / 7 Vol. 47; Iss. 7

Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography

Wutimakun, Passapong, Mori, Taichiro, Miyazaki, Hisashi, Okamoto, Yoichi, Morimoto, Jun, Hayashi, Toshihiko, Shiomi, Hiromu
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.5576
Date:
July, 2008
File:
PDF, 96 KB
english, 2008
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