Improvement in SiO 2 Film Properties Formed by Sputtering Method at 150 °C
Urabe, Yuji, Sameshima, Toshiyuki, Motai, Katsuyuki, Ichimura, KojiVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.8003
Date:
October, 2008
File:
PDF, 1.26 MB
english, 2008