Positron Trapping Sites Originating from Oxide Interfaces...

Japanese Journal of Applied Physics 2008 / 11 Vol. 47; Iss. 11

Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C(000\bar1)- and Si(0001)-Faces

Kinomura, Atsushi, Suzuki, Ryoichi, Oshima, Nagayasu, Ohdaira, Toshiyuki, Harada, Shinsuke, Kato, Makoto, Tanaka, Yasunori, Kinoshita, Akimasa, Fukuda, Kenji
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.8391
Date:
November, 2008
File:
PDF, 107 KB
english, 2008
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