In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor
Seabaugh, A.C., Randall, J.N., Kao, Y.-C., Luscombe, J.H., Bouchard, A.M.Volume:
27
Year:
1991
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19911139
File:
PDF, 463 KB
english, 1991