![](/img/cover-not-exists.png)
InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits
Kızıloḡlu, K., Yung, M.W., Sun, H.C., Thomas, S., Kardos, M.B., Walden, R.H., Brown, J.J., Stanchina, W.E.Volume:
33
Year:
1997
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19971384
File:
PDF, 617 KB
english, 1997