In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor...

Electronics Letters 1999 Vol. 35; Iss. 5

In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with -doped continuous-conduction-band (CCB) structure

Pan, Hsi-Jen, Cheng, Shiou-Ying, Chang, Wen-Lung, Feng, Shun-Ching, Yu, Kuo-Hui, Liu, Wen-Chau
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Volume:
35
Year:
1999
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19990220
File:
PDF, 111 KB
english, 1999
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