Growth of Semi-Insulating GaN Using N 2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time
Zhong-Tang, Zhou, Zhi-Gang, Xing, Li-Wei, Guo, Hong, Chen, Jun-Ming, ZhouVolume:
24
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/24/6/059
Date:
June, 2007
File:
PDF, 632 KB
english, 2007