Formation of Ohmic Contacts to n-GaAs by Solid Phase...

Japanese Journal of Applied Physics 1987 / 1 Vol. 26; Iss. Part 1, No

Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films

Fukada, Tsuyoshi, Asano, Tanemasa, Frukawa, Seijiro, Ishiwara, Hiroshi
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Volume:
26
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.26.117
Date:
January, 1987
File:
PDF, 269 KB
english, 1987
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