Degradation of Activation on Si-Implanted GaAs Crystal...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 2, No

Degradation of Activation on Si-Implanted GaAs Crystal Wafers by Mechanical Surface Damages

Watanabe, Masatoshi, Shinzawa, Shoji, Okubo, Seiichi, Otoki, Yoohei, Kuma, Shoji
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1957
Date:
November, 1990
File:
PDF, 270 KB
1990
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