Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at...

Japanese Journal of Applied Physics 1990 / 6 Vol. 29; Iss. Part 2, No

Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630°C

Kato, Takamasa, Matsumoto, Takashi, Ogura, Hiroyuki
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L856
Date:
June, 1990
File:
PDF, 913 KB
1990
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