Growth and Characterization of In 0.83 Ga 0.17 As 0.39 P 0.61 Layers by Liquid-Phase Epitaxy Using Erbium Gettering
Wu, Meng-Chyi, Chiu, Cheng-Ming, Tu, Yuan-KuangVolume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.2587
Date:
June, 1993
File:
PDF, 334 KB
english, 1993