Dopant Redistribution Effect on Post-Junction Silicide...

Japanese Journal of Applied Physics 1994 / 1 Vol. 33; Iss. Part 1, No

Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme

Ohtomo, Atsushi, Ida, Jiro, Yonekawa, Kiyotaka, Kai, Kazuhiko, Aikawa, Izumi, Kita, Akio, Nishi, Kenji
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.475
Date:
January, 1994
File:
PDF, 199 KB
english, 1994
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