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S i H 3C H 3 + F : A Potential Reaction System for Preparing Uniform SiC Film Predicted by Using an Ab Initio Molecular Orbital Method
Sato, Kota, Yano, Daisuke, Iwabuchi, Susumu, Hirano, Tsuneo, Koinuma, HideomiVolume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.4801
Date:
September, 1994
File:
PDF, 617 KB
english, 1994