Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy
Lin, Tsai-Cheng, Kaibe, Hiromasa T., Okumura, TsugunoriVolume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L1651
Date:
December, 1994
File:
PDF, 378 KB
english, 1994