Electrical Properties of Ferroelectric Gate HEMT Structures

Japanese Journal of Applied Physics 1996 / 2 Vol. 35; Iss. Part 1, No

Electrical Properties of Ferroelectric Gate HEMT Structures

Ohmi, Shun-ichiro, Yoshihara, Makoto, Okamoto, Takeo, Tokumitsu, Eisuke, Ishiwara, Hiroshi
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.1254
Date:
February, 1996
File:
PDF, 721 KB
english, 1996
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