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A 0.25 µ m Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)
Jung, Dong Jin, Park, Jae Kwan, Lee, Kang Yoon, Kang, Nam Soo, Kim, Ki Nam, Shim, Tae Earn, Park, Jong WooVolume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.865
Date:
February, 1996
File:
PDF, 262 KB
english, 1996