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Distribution Profiles of B Atoms in Diborane Implanted...

Japanese Journal of Applied Physics 1999 / 9 Vol. 38; Iss. Part 1, No

Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters

Yokota, Katsuhiro, Nakamura, Kazuhiro, Nishimura, Hidetoshi, Terada, Kouichiro, Sakai, Shigeki, Tanjou, Masayasu, Takano, Hiromichi, Kumagaya, Masao
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.4953
Date:
September, 1999
File:
PDF, 423 KB
english, 1999
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