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The Growth Mechanism of SiC Film on a Si(111)-(7×7) Surface by C 60 Precursor Studied by Photoelectron Spectroscopy
Sakamoto, Kazuyuki, Kondo, Daiyu, Ohno, Kenichi, Kimura, Akio, Kakizaki, Akito, Suto, Shozo, Uchida, Wakio, Kasuya, AtsuoVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.4536
Date:
July, 2000
File:
PDF, 148 KB
english, 2000