Effects of Nitride Lightly-Doped-Drain Spacers on...

Japanese Journal of Applied Physics 2000 / 1 Vol. 39; Iss. Part 2, No

Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress

Lin, Jengping, Liu, Willie, Lin, Chi-Hui
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Volume:
39
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.L28
Date:
January, 2000
File:
PDF, 531 KB
2000
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