Metal–Oxide–Semiconductor-Diode Characteristics with SiO 2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
Saito, Kunio, Jin, Yoshito, Ono, Toshiro, Shimada, MasaruVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.1031
Date:
February, 2005
File:
PDF, 315 KB
english, 2005