Noise Analysis of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors with Photochemical-Vapor Deposition SiO 2 Layers
Chiou, Yu-ZungVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2465
Date:
April, 2005
File:
PDF, 164 KB
english, 2005