Fabrication of Pt/Sr 2 (Ta...

Japanese Journal of Applied Physics 2006 / 9 Vol. 45; Iss. 9B

Fabrication of Pt/Sr 2 (Ta 1- x ,Nb x ) 2 O 7 /IrO 2 /SiO 2 /Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor

Takahashi, Ichirou, Azumi, Keita, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.7336
Date:
September, 2006
File:
PDF, 410 KB
english, 2006
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