Performance Improvement of HfAlO x...

Performance Improvement of HfAlO x N n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms

Iwamoto, Kunihiko, Nishimura, Tomoaki, Ohta, Akio, Tominaga, Koji, Nabatame, Toshihide, Miyazaki, Seiichi, Toriumi, Akira
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.7666
Date:
December, 2007
File:
PDF, 387 KB
english, 2007
Conversion to is in progress
Conversion to is failed