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Performance Improvement of HfAlO x N n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
Iwamoto, Kunihiko, Nishimura, Tomoaki, Ohta, Akio, Tominaga, Koji, Nabatame, Toshihide, Miyazaki, Seiichi, Toriumi, AkiraVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.7666
Date:
December, 2007
File:
PDF, 387 KB
english, 2007