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Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond
Putra, Arifin Tamsir, Nishida, Akio, Kamohara, Shiro, Tsunomura, Takaaki, Hiramoto, ToshiroVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.044502
Date:
April, 2009
File:
PDF, 314 KB
english, 2009