Current Enhancement with Contact-Area-Limited Doping for...

Japanese Journal of Applied Physics 2013 / 02 Vol. 52; Iss. 2R

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

Noda, Kei, Wakatsuki, Yusuke, Yamagishi, Yuji, Wada, Yasuo, Toyabe, Toru, Matsushige, Kazumi
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.021602
Date:
February, 2013
File:
PDF, 494 KB
english, 2013
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