High-mobility Ga0.47In0.53As thin epitaxial layers grown by...

High-mobility Ga0.47In0.53As thin epitaxial layers grown by MBE, very closely lattice-matched to InP

Massies, J., Rochette, J., Delescluse, P., Etienne, P., Chevrier, J., Linh, Nuyen T.
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Volume:
18
Year:
1982
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19820513
File:
PDF, 506 KB
english, 1982
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