In Situ Self Ion Beam Annealing of Damage in Si during High...

Japanese Journal of Applied Physics 1981 / 11 Vol. 20; Iss. 11

In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As + Ion Implantation

Nakata, Jyoji, Takahashi, Mitsutoshi, Kajiyama, Kenji
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
20
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.20.2211
Date:
November, 1981
File:
PDF, 1.17 MB
1981
Conversion to is in progress
Conversion to is failed