GaAs P-Layer Formation by Be Ion Implantation

Japanese Journal of Applied Physics 1983 / 7 Vol. 22; Iss. Part 2, No

GaAs P-Layer Formation by Be Ion Implantation

Sugata, Sumio, Tsukada, Noriaki, Nakajima, Masato, Kuramoto, Kazuo, Mita, Yoh
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Volume:
22
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.22.L470
Date:
July, 1983
File:
PDF, 332 KB
1983
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