Photoluminescence from GaAs/CaF 2 /Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
Uchigoshi, Masahiro, Tsutsui, Kazuo, Furukawa, SeijiroVolume:
30
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.L444
Date:
March, 1991
File:
PDF, 588 KB
english, 1991