Low Temperature Deposition of Gate Silicon Dioxide Film for...

Japanese Journal of Applied Physics 1996 / 10 Vol. 35; Iss. Part 1, No

Low Temperature Deposition of Gate Silicon Dioxide Film for Thin Film Transistors by Photoassisted Remote Plasma Chemical Vapor Deposition Method

Shindo, Hitoshi, Suzuki, Nobumasa
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.5522
Date:
October, 1996
File:
PDF, 271 KB
english, 1996
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