Highly Selective SiO 2...

Japanese Journal of Applied Physics 1997 / 4 Vol. 36; Iss. Part 1, No

Highly Selective SiO 2 Etching Using CF 4 /C 2 H 4

Sakaue, Hiroyuki, Kojima, Akisiro, Osada, Naomichi, Shingubara, Shoso, Takahagi, Takayuki
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.2477
Date:
April, 1997
File:
PDF, 790 KB
1997
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