Low Leakage TiO 2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
Matsuo, Kouji, Nakajima, Kazuaki, Omoto, Seiichi, Nakamura, Shinichi, Yagishita, Atsushi, Minamihaba, Gaku, Yano, Hiroyuki, Suguro, KyoichiVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.5794
Date:
October, 2000
File:
PDF, 405 KB
english, 2000