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Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias
Choi, Byung-Kil, Kwon, Hyuck-In, Cho, Il Hwan, Lee, Jong-HoVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.054503
Date:
May, 2009
File:
PDF, 251 KB
english, 2009