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Effects of Si/Ni Composition Ratio of Ni x Si y Gate Electrode and Hf/Si Composition Ratio of Hf-Based High- k Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
Terai, Masayuki, Hase, Takashi, Shibahara, Kentaro, Watanabe, HirohitoVolume:
49
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.036504
Date:
March, 2010
File:
PDF, 255 KB
2010