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Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor
Shih, Hong-An, Kudo, Masahiro, Akabori, Masashi, Suzuki, Toshi-kazuVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.02BF01
Date:
February, 2012
File:
PDF, 566 KB
english, 2012