Device Performance and Switching Characteristics of 16 kV...

Materials Science Forum 2015 / 6 Vol. 821-823

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Deguchi, T., Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Dai, Sometani, Mitsuru, Okamoto, M., Yoshikaw
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Volume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.842
Date:
June, 2015
File:
PDF, 550 KB
english, 2015
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