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Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
Miyazawa, Tetsuya, Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Ji, Shi Yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, HidekazuVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.851
Date:
June, 2015
File:
PDF, 384 KB
english, 2015